Reverse-Bias Defect Creation in Cu(In,Ga)Se2 Solar Cells and Impact of Encapsulation

Reverse breakdown in Cu(In,Ga)Se2 (CIGS) solar cells can lead to defect creation and performance degradation. We present pulsed reverse-bias experiments, where we stress CIGS with a short reverse voltage pulse of ten milliseconds detect the electrical thermal response cell. This way, limit duration stress, allowing us study initial stages modules. Our results show that permanent damage develop very fast under milliseconds. Furthermore, find location as well susceptibility bias depends strongly on whether cell is encapsulated or not, are generally more robust against bias.